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GaN Product
Specification
| Item | D-GaNTU-C100 | ||
|---|---|---|---|
| Dimension | ø 100 ± 0.1 mm | ||
| Thickness | 4.5 ± 0.5 μm | ||
| 20 ± 2 μm | |||
| Usable Surface Area | > 90% | ||
| Orientation | C-plane(0001) ± 0.5° | ||
| Conduction Type | N-type (Undoped) | ||
| Resistivity (300K) | < 0.5 Ω·cm | ||
Carrier Concentration | < 5 x 10¹⁷ cmˉ³ | ||
| Mobility | ~ 300 cm²/V·s | ||
| Dislocation Density | Less than 5x10⁸ cmˉ² (estimated by FWHMs of XRD) | ||
| Substrate Structure | GaN on sapphire (standard :SSP option:DSP) | ||
| Package | Packaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere. | ||
| Item | D-GaN-AUNSIS | ||
|---|---|---|---|
| Size | (5.0~10.0) X 10.0 mm² | ||
| (5.0~10.0) X 20.0 mm² | |||
| Thickness | 350 ± 25 μm | ||
| Plane | (1120) | ||
| Miscut Angle | -1° ± 0.2° | ||
| TTV | ≤ 10 μm | ||
| BOW | ≤ 10 μm | ||
Conduction Type & Resistivity (300K) | N-type < 0.1 Ω·cm | ||
| N-type < 0.05 Ω·cm | |||
| Semi-Insulating > 10⁶ Ω·cm | |||
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶ cmˉ² | ||
| Useable area | > 90% | ||
| Polishing | Front Surface：Ra＜0.2 nm(polished); | ||
| Back Surface：1-3nm(Fine ground); option：<0.2nm(polished) | |||
| Package | Packaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere. | ||
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