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GaN Product
Specification
| Size | 10.0 x 10.5 mm² (Size can be customized) | ||
| Thickness | 350 ± 25 ㎛ | ||
| Usable Surface Area | > 90% | ||
| Orientation | C-Plane (0001) off angle toward M-Axis 0.35º ± 0.15º | ||
| TTV(Total Thickness Variation) | ≤ 10 ㎛ | ||
| BOW | ≤ 10 ㎛ | ||
| Conduction Type | N-type | N-type | Semi-Insulating |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 10⁶ Ω·cm |
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶ cmˉ² (GB/T32282-2015) | ||
| Polishing | Front surface: Ra < 0.2nm (polished); or < 0.3nm (polished and surface treatment for epitaxy) | ||
| Back surface: 0.5~1.5 ㎛; option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||
| Package | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere. | ||
| Size | 10.0 x 10.5 mm² (Size can be customized) | ||
| Thickness | 350 ± 25 ㎛ | ||
| Usable Surface Area | > 90% | ||
| Orientation | C-Plane (0001) off angle toward M-Axis 0.35º ± 0.15º | ||
| TTV(Total Thickness Variation) | ≤ 10 ㎛ | ||
| BOW | ≤ 10 ㎛ | ||
| Conduction Type | N-type | N-type | Semi-Insulating |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 10⁶ Ω·cm |
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶ cmˉ² (GB/T32282-2015) | ||
| Polishing | Front surface: Ra < 0.2nm (polished); or < 0.3nm (polished and surface treatment for epitaxy) | ||
| Back surface: 0.5~1.5 ㎛; option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||
| Package | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere. | ||
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