{"type":"img","src":"//cdn.quv.kr/rpgnmrji6/up/5ea26f8acda5d_1920.png","height":63}
  • Company
  • Product
  • Contact
    • {"google":[],"custom":["Noto Sans KR"]}
    LOGO
    ×
     
     
    섹션 설정
    {"type":"img","src":"//cdn.quv.kr/rpgnmrji6/up/5efd582ad7aad_1920.png","height":"22"}
  • Home
  • Company
  • Product
  • Contact

    • PRODUCTS

    GaN Product


    10 X 10.5mm² GaN Substrates (Fe-doped)

    10 X 10.5mm² Free-Standing

    Gallium Nitride Substrates (Fe-doped)


    D-GaNCSI-C50
    Resistivity :> 10⁶ Ω·cm

    Dislocation Density:

    		1~3 x 10⁶ cmˉ²

    		5~9 x 10⁵ cmˉ²

    		1~5 x 10⁵ cmˉ²
    Polishing :Ga-face Polishing

    		N-face Polishing

    		Double side Polishing


    Detail

    Specification


    ItemD-GaNCSI-S10
    Size10 X 10.5 mm²
    Thickness350 ± 25 μm
    Dislocation DensityFrom 1 x 10⁵ to 3 x 10⁶ cmˉ²
    OrientationC-Plane (0001) off angle toward M-Axis  0.35 ± 0.15º 
    TTV≤ 10 μm
    BOW≤ 10 μm
    Conduction TypeN-type
    Resistivity (300K)> 10⁶ Ω·cm
    Useable area> 90%
    PolishingFront Surface：Ra＜0.2 nm(polished);  or <0.3nm(polished and surface treatment for epitaxy)
    Back Surface：0.5~1.5μm;   option：1-3nm(Fine ground); <0.2nm(polished)
    PackagePackaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere.

    {"google":["Roboto","Noto Sans"],"custom":["Noto Sans KR"]}
    {"google":["Roboto"],"custom":["Noto Sans KR"]}
    {"google":[],"custom":["Noto Sans KR"]}