섹션 설정
GaN Product
Specification
| Dimension | (5.0 ~ 10.0) x 10.0 mm² | ||
| (5.0 ~ 10.0) x 20.0 mm² | |||
| Thickness | 350 ± 25 ㎛ | ||
| Plane | (1120) | (1100) | (2021) (2021) (1122) (1011) |
| Miscut Angle | -1º ± 0.2º | ||
| Usable Surface Area | > 90% | ||
| TTV(Total Thickness Variation) | ≤ 10 ㎛ | ||
| BOW | ≤ 10 ㎛ | ||
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶ cmˉ² (GB/T32282-2015) | ||
Conduction Type Resistivity (300K) | N-type < 0.1 Ω·cm | ||
| N-type < 0.05 Ω·cm | |||
| Semi-Insulating > 10⁶ Ω·cm | |||
| Polishing | Front surface: Ra <0.2nm (polished) | ||
| Back surface: 0.5~1.5 ㎛; option: 1~3 nm (fine ground); option : < 0.2 nm (polished) | |||
| Package | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere. | ||
| Dimension | (5.0 ~ 10.0) x 10.0 mm² | ||
| (5.0 ~ 10.0) x 20.0 mm² | |||
| Thickness | 350 ± 25 ㎛ | ||
| Plane | (1120) | (1100) | (2021) (2021) (1122) (1011) |
| Miscut Angle | -1º ± 0.2º | ||
| Usable Surface Area | > 90% | ||
| TTV(Total Thickness Variation) | ≤ 10 ㎛ | ||
| BOW | ≤ 10 ㎛ | ||
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶ cmˉ² (GB/T32282-2015) | ||
Conduction Type Resistivity (300K) | N-type < 0.1 Ω·cm | ||
| N-type < 0.05 Ω·cm | |||
| Semi-Insulating > 10⁶ Ω·cm | |||
| Polishing | Front surface: Ra <0.2nm (polished) | ||
| Back surface: 0.5~1.5 ㎛; option: 1~3 nm (fine ground); option : < 0.2 nm (polished) | |||
| Package | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere. | ||
로그인
로그인
네이버 아이디로 로그인 
카카오 아이디로 로그인 
구글 아이디로 로그인 ID/PW로 가입하기
네이버 아이디로 가입하기
카카오 아이디로 가입하기
구글 아이디로 가입하기