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    • PRODUCTS

    GaN Product


    Non/Semi-Polar GaN Substrates (SP)

    Non-Polar & Semi-Polar Free-Standing Gallium Nitride Substrates (SP)


    D-GaN-SPUNSIS
    Conductivity     type :Undoped


    		Semi-insulating
    Size :5 x 10.5 mm²

    		5 x 20.5 mm²
    Polishing :Front surface


    Detail

    Specification


    ItemD-GaN-SPUNSIS
    Size(5.0~10.0) X 10.0 mm²
    (5.0~10.0) X 20.0 mm²
    Thickness350 ± 25 μm
    Plane

    (2021)

    (2021)

    (1122)

    (1011)

    Miscut Angle-1° ± 0.2°
    TTV≤ 10 μm
    BOW≤ 10 μm

    Conduction Type & Resistivity (300K)

    		N-type  < 0.1 Ω·cm
    N-type < 0.05 Ω·cm
    Semi-Insulating > 10⁶ Ω·cm
    Dislocation DensityFrom 1 x 10⁵ to 3 x 10⁶ cmˉ²
    Useable area> 90%
    PolishingFront Surface：Ra＜0.2 nm(polished); 
    Back Surface：1-3nm(Fine ground); option：<0.2nm(polished)
    PackagePackaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere.


    D-GaN-SPUNSIS
    Conductivity        type :Undoped


    		Semi-insulating
    Size :5 x 10.5 mm²

    		5 x 20.5 mm²
    Polishing :Front surface


    Detail


    ItemD-GaN-SPUNSIS
    Size(5.0~10.0) X 10.0 mm²
    (5.0~10.0) X 20.0 mm²
    Thickness350 ± 25 μm
    Plane

    (2021)

    (2021)

    (1122)

    (1011)

    Miscut Angle-1° ± 0.2°
    TTV≤ 10 μm
    BOW≤ 10 μm

    Conduction Type & Resistivity (300K)

    		N-type  < 0.1 Ω·cm
    N-type < 0.05 Ω·cm
    Semi-Insulating > 10⁶ Ω·cm
    Dislocation DensityFrom 1 x 10⁵ to 3 x 10⁶ cmˉ²
    Useable area> 90%
    PolishingFront Surface：Ra＜0.2 nm(polished); 
    Back Surface：1-3nm(Fine ground); option：<0.2nm(polished)
    PackagePackaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere.
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