섹션 설정
SiC Wafer
Specification
| Dimension | 100 ± 0.5 mm | 150 ± 0.2 mm |
| Thickness | 350 ± 25 ㎛ (N type) / 500 ± 25 ㎛ (SI type) | |
| Orientation | Off axis: 0.4º toward <1120> ± 0.15º (N type) | |
| On axis: <0001> ± 0.2º (SI type) | ||
| Micropipe Density | ≤ 10 cm-² | ≤ 15 cm-² |
| Resistivity | 0.015 ~ 0.025 Ω·cm (N type) | |
| > 1E9 Ω·cm (SI type) | ||
| Primary Flat | (1-100) ± 5.0º | |
| Primary Flat Length | 32.5 mm ± 1.5 mm | 47.5 mm ± 1.5 mm |
| TTV(Total Thickness Variation) | ≤ 20 ㎛ | |
| BOW | -45 ~ 45 ㎛ | |
| Warp | ≤ 50 ㎛ | |
| Surface Finish | Si-face CMP | |
| Back Finish | C-face CMP | |
| Roughness | Polish Ra ≤ 0.2 nm | |
| CMP Ra ≤ 0.2 nm | ||
| Polytype Areas | ≤ 30 % | |
| Edge Exclusion | 2mm | |
| Package | Multi-wafer cassrtte | |
| Dimension | ⌀ 50.8 ± 1 mm | ||
| Thickness | 350 ± 25 ㎛ | ||
| Usable Surface Area | > 90% | ||
| Orientation | C-Plane (0001) off angle toward M-Axis 0.35º ± 0.15º | ||
| Orientation Flat | (1-100) ± 0.5º, 16.0 ± 1.0 mm | ||
| Secondary Orientation Flat | (11-20) ± 3º, 8.0 ± 1.0 mm | ||
| TTV(Total Thickness Variation) | ≤ 15 ㎛ | ||
| BOW | ≤ 20 ㎛ | ||
| Conduction Type | N-type | N-type | Semi-Insulating |
| Resistivity (300K) | < 0.1 Ω·cm | < 0.05 Ω·cm | > 10⁶ Ω·cm |
| Dislocation Density | From 1 x 10⁵ to 3 x 10⁶ cmˉ² (GB/T32282-2015) | ||
| Polishing | Front surface: Ra < 0.2nm (polished); or < 0.3nm (polished and surface treatment for epitaxy) | ||
| Back surface: 0.5~1.5㎛; option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||
| Package | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere. | ||
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