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    SiC Wafer


    SiC Epitaxial Wafer

    Silicon carbide

    Epitaxial Wafer


    SiC Research wafer
    Dimension :4": 100 ± 0.5 mm
    6": 150 ± 0.2 mm
    Thickness :N: 350 ± 25 ㎛
    Si: 500 ± 25 ㎛
    TTV :≤ 10 ㎛
    BOW :-35 ~ 35 ㎛
    Micropipe Density4": ≤ 5 cm-²
    6": ≤ 10 cm-²


    Detail

    Specification

    Item


    Size3inch / 4inch / 6inch3inch / 4inch / 6inch
    Poly-type4 H4 H
    DopantNitrogenAluminum
    Doping DensityND-NANA-ND
    Silicon surface9e14 ~ 1E19 cm-³
    Tolerance± 15 %± 50 %
    Uniformity≤ 10 %≤ 20 %
    Thickness0.2 ~ 50 μm
    Tolerance± 10 %± 10 %
    Uniformity≤ 10 %≤ 10 %

    Item


    Dimension⌀ 50.8 ± 1 mm
    Thickness350 ± 25 ㎛
    Usable Surface Area> 90%
    OrientationC-Plane (0001) off angle toward M-Axis 0.35º ± 0.15º
    Orientation Flat(1-100) ± 0.5º, 16.0 ± 1.0 mm
    Secondary Orientation Flat(11-20) ± 3º, 8.0 ± 1.0 mm
    TTV(Total Thickness Variation)≤ 15 ㎛
    BOW≤ 20 ㎛
    Conduction TypeN-typeN-typeSemi-Insulating
    Resistivity (300K)< 0.1 Ω·cm< 0.05 Ω·cm> 10⁶ Ω·cm
    Dislocation DensityFrom 1 x 10⁵ to 3 x 10⁶ cmˉ² (GB/T32282-2015)
    PolishingFront surface: Ra < 0.2nm (polished); or < 0.3nm (polished and surface treatment for epitaxy)
    Back surface: 0.5~1.5㎛; option: 1~3 nm (fine ground); < 0.2 nm (polished)
    PackagePackaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere.

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