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Wafer
SiC Wafer
SiC Substrate wafer
SiC Substrates
SiC Substrate Wafer
SiC Wafer (Dummy grade)
Size: 100 mm ± 0.5 mm
Thickness: 350 ± 25, 500 ± 25 µm
Micro pipe density (300K): ≤ 10cm⁻²
SiC Wafer (Research grade)
SiC Wafer (Production grade)
SiC Wafer (Ultra low MPD)
SiC Epi wafer
SiC Epitaxial Wafer
Size: 3inch / 4inch / 6inch
Type: N-type / P-Type
Dopant: Nitrogen / Aluminum
Thickness: 0.2 ~ 50 um
AS-CUT SiC wafer
Raw-cut SiC wafer
Un-Polished SiC wafer
As-Cut SiC wafer
Non/Semi-Polar GaN Substrate(A)
Size:(5.0~10.0)× 10.0 mm²
Size:(5.0~10.0)× 20.0mm²
Thickness: 350 ± 25 µm
Resistivity (300K): < 0.1 Ω·cm
Non/Semi-Polar GaN Substrate(M)
Non/Semi-Polar GaN Substrate(SP)
+82-2-333-2738
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