{"type":"img","src":"//cdn.quv.kr/rpgnmrji6/up/5ea26f8acda5d_1920.png","height":63}
  • Company
  • Product
  • Contact
    • {"google":[],"custom":["Noto Sans KR"]}
    LOGO
    ×
     
     
    섹션 설정
    {"type":"img","src":"//cdn.quv.kr/rpgnmrji6/up/5efd582ad7aad_1920.png","height":"22"}
  • Home
  • Company
  • Product
  • Contact

    • PRODUCTS

    GaN Product


    4" GaN Templates

    4 inch Gallium Nitride Templates


    4" Free Standing
    Dimension :⌀ 100 ± 0.1 mm
    Thickness :4.5 ± 0.5 ㎛ , 20 ± 2 ㎛
    Orientation :C-plane (0001) ± 0.5

    Substrate

    Structure :

    		GaN on sapphire 


    Detail


    Dimension⌀ 100 ± 0.1 mm
    Thickness4.5 ± 0.5 ㎛, 20 ± 2 ㎛
    Usable Surface Area> 90%
    OrientationC-Plane (0001)  ± 0.5º
    Conduction TypeN-type (Undoped)N-type (Si-doped)
    Resistivity (300K)< 0.5 Ω·cm< 0.05 Ω·cm
    Carrier Concentration< 5 x 10¹⁷ cmˉ³> 1 x 10¹⁸ cmˉ³
    Mobility~ 300 cm² /V·s~ 200 cm² /V·s
    Dislocation DensityLess than 5 x 10⁸ cmˉ² (estimated by FWHMs of XRD)
    Substrate StructureGaN on sapphire (standard: SSP / option: DSP)
    PackagePackaged in a class 100 clean room environment, in cassette of 25pcs or single container, under a nitrogen atmosphere

    {"google":["Roboto"],"custom":["Noto Sans KR"]}
    {"google":["Roboto"],"custom":["Noto Sans KR"]}
    {"google":[],"custom":["Noto Sans KR"]}